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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1518 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) *High Switching Speed APPLICATIONS *Switching regulator and high voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage IC Collector Current-Continuous w ww scs .i UNIT 900 V 400 V 7 V 6 A 10 A 3 A .cn mi e ICM Collector Current-Pulse IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 50 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1518 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V ICBO Collector Cutoff Current VCB= 900V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 10mA ; VCE= 5V 8 hFE-2 DC Current Gain IC= 0.6A; VCE= 5V fT Current-Gain--Bandwidth Product COB Output Capacitance tf Fall Time w w scs .i w IC= 0.1A; VCE= 10V IE= 0; VCB= 10V; ftest= 1.0MHz .cn mi e 10 40 5 MHz 75 pF IC= 2.5A; IB1= 0.5A; IB2= -1A 0.5 s isc Websitewww.iscsemi.cn 2 |
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